30mm Dia AlN Single Crystal Semiconductor Substrate

Silicon-based semiconductor technology has reached its limits and could not satisfy the requirements of future

electronic devices. As a typical kind of 3rd/4th-generation semiconductor material, aluminum nitride (AlN) has

superior physical and chemical properties such as wide bandgap, high thermal conductivity, high breakdown filed,

high electronic mobility and corrosion/radiation resistance, and is a perfect substrate for optoelectronic devices,

radio frequency (RF) devices, high-power/high-frequency electronic devices, etc.. Particularly, AlN substrate is the

best candidate for UV-LED, UV detectors, UV lasers, 5G high-power/high-frequency RF devices and 5G SAW/BAW

devices, which could widely be used in environmental protection, electronics, wireless communications, printing,

biology, healthcare, military and other fields, such as UV purification/sterilization, UV curing, photocatalysis, coun

terfeit detection, high-density storage, medical phototherapy, drug discovery, wireless and secure communication,

aerospace/deep-space detection and other fields.

we have developed a serials of proprietary processes and technologies to fabricate

high-quality AlN templates. At present, Our OEM is the only company worldwide who can produce 2-6 inch AlN

templates in large-scale industrial production capability with capacity of 300,000 pieces in 2020 to meet explosive

market demand from UVC-LED, 5G wireless communication, UV detectors and sensors etc

We currently provide customers with standardized 10x10mm/Φ10mm/Φ15mm/Φ20mm/Φ25.4mm/Φ30mm/Φ50.8mm high quality nitrogen
Aluminum single crystal substrate products, and can also provide customers with 10-20mm non-polar
M-plane aluminum nitride single crystal substrate, or customize non-standard 5mm-50.8mm to customers
Polished aluminum nitride single crystal substrate. This product is widely used as a high-end substrate material
Used in UVC-LED chips, UV detectors, UV lasers, and various high power
/High temperature/high frequency electronic device field.

Specification

• Model UTI-AlN-030B-single crystal
• Diameter Dia30±0.5mm ；
• Substrate thickness (µm) 400 ± 50
• Orientation C-axis [0001] +/- 0.5°

Quality Grade S-grade(super) P-grade(production) R-grade(Research)

• Cracks None None <3mm
• FWHM-2θXRD@(0002) <150 <300 <500
• FWHM-HRXRD@(10-12) <100 <200 <400
• Surface Roughness [5×5µm] (nm) Al-face <0.5nm; N-face(back surface) <1.2um;
• Usable area 90%
• Absorbance <50 ； <70 ； <100；
• 1st OF length orientation {10-10} ±5°；
• TTV (µm) ≤30
• Bow (µm) ≤30
• Warp (µm) -30~30
• Note: These characterization results may vary slightly depending on the equipments and/or software employed