Home > Semiconductor Substrate >

Ti/Cu Metal-Coated Silicon Wafer (Titanium/Copper)

Product Categories

Plastic Carrier Bags [1]
Sapphire Substrate [102]
Sapphire Optical Windows [109]
Silicon Carbide Wafer [130]
Sapphire Tube [77]
Semiconductor Substrate [107]
T8 Led Light Tube [1]
Synthetic Gem Stone [78]
Ceramic Parts [24]
Scientific Lab Equipment [63]
Sapphire Crystal Watch Case [23]
Wafer Carrier Box [18]
Superconducting Thin Monocrystalline Substrate [13]
Gallium Nitride Wafer [24]

SHANGHAI FAMOUS TRADE CO.,LTD

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Ti/Cu Metal-Coated Silicon Wafer (Titanium/Copper)

Name: TiCu MetalCoated Silicon Wafer TitaniumCopper
Brand: ZMSH
Price: 1 USD

China Ti/Cu Metal-Coated Silicon Wafer (Titanium/Copper) wholesale

Brand Name : ZMSH

Place of Origin : China

MOQ : 1

Price : by case

Payment Terms : T/T

Supply Ability : By case

Delivery Time : 2-4 weeks

Packaging Details : custom cartons

Wafer size : 2", 4", 6", 8"; 10×10 mm pieces; any custom size available

Conductivity type : P-type, N-type, Intrinsic high-resistivity (Un)

Crystal orientation : <100>, <111>, etc.

Available metal films (series) : Ti/Cu; also available: Au, Pt, Al, Ni, Ag, etc.

Substrate material : Silicon (Si); optional: quartz, BF33 glass, etc.

Substrate thickness (µm) : 2": 200 / 280 / 400 / 500 / as required; 4": 450 / 500 / 525 / as required; 6": 625 / 650 / 675 / as required; 8": 650 / 700 / 725 / 775 / as required

Contact Now

Product Overview

Ti/Cu metal-coated silicon wafers are fabricated by depositing a titanium (Ti) adhesion layer followed by a copper (Cu) conductive layer on high-quality substrates using standard magnetron sputtering. The Ti layer enhances film adhesion and interfacial stability, while the Cu layer provides excellent electrical conductivity. Multiple wafer sizes, conductivity types, orientations, resistivity ranges, and film thicknesses are available, with full customization supported for research and industrial prototyping.

Ti/Cu Metal-Coated Silicon Wafer (Titanium/Copper)

Structure & Process

Film stack: Substrate + Adhesion layer (Ti) + Coating layer (Cu)
Deposition process: Standard magnetron sputtering (optional: thermal evaporation / electroplating by request)
Key features: Strong adhesion, low resistance surface, suitable for subsequent lithography, electroplating build-up, or device fabrication.

Ti/Cu Metal-Coated Silicon Wafer (Titanium/Copper)

Specifications (Customizable)

Item	Specification / Options
Wafer size	2", 4", 6", 8"; 10×10 mm pieces; any custom size available
Conductivity type	P-type, N-type, Intrinsic high-resistivity (Un)
Crystal orientation	<100>, <111>, etc.
Resistivity	Low: < 0.0015 Ω·cm; Medium: 1–10 Ω·cm; High: > 1000–10000 Ω·cm
Substrate thickness (µm)	2": 200 / 280 / 400 / 500 / as required; 4": 450 / 500 / 525 / as required; 6": 625 / 650 / 675 / as required; 8": 650 / 700 / 725 / 775 / as required
Substrate material	Silicon (Si); optional: quartz, BF33 glass, etc.
Stack structure	Substrate + Ti adhesion layer + Cu coating
Deposition method	Magnetron sputtering (standard); optional: thermal evaporation / electroplating
Available metal films (series)	Ti/Cu; also available: Au, Pt, Al, Ni, Ag, etc.
Film thickness	10 nm, 50 nm, 100 nm, 150 nm, 300 nm, 500 nm, 1 µm, etc. (customizable)

Applications

Ohmic contacts & electrodes: conductive substrates, contact pads, electrical testing
Seed layer for electroplating: RDL, microstructures, MEMS electroplating processes
Nanomaterials & thin-film research: sol–gel substrates, nanomaterial growth and characterization
Microscopy & probe metrology: SEM, AFM, and other scanning probe microscopy applications
Bio/chemical platforms: cell culture, protein/DNA microarrays, reflectometry substrates, sensing platforms

Advantages

Excellent adhesion enabled by Ti interlayer
High conductivity and uniform Cu surface
Wide selection of wafer sizes, resistivity ranges, and orientations
Flexible customization for size, substrate, film stack, and thickness
Stable, repeatable process using mature sputtering technology

FAQ (Ti/Cu Metal-Coated Silicon Wafers)

Q1: Why is a Ti layer used under the Cu coating?
A: Titanium works as an adhesion (bonding) layer, improving the attachment of copper to the substrate and enhancing interface stability, which helps reduce peeling or delamination during handling and processing.

Q2: What is the typical Ti/Cu thickness configuration?
A: Common combinations include Ti: tens of nm (e.g., 10–50 nm) and Cu: 50–300 nm for sputtered films. Thicker Cu layers (µm-level) are often achieved by electroplating on a sputtered Cu seed layer, depending on your application.

Q3: Can you coat both sides of the wafer?
A: Yes. Single-side or double-side coating is available upon request. Please specify your requirement when ordering.

Product Tags: